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256 Kbit / 512 Kbit / 1 Mbit / 2 Mbit (x8) Many-Time Programmable Flash
SST27SF256 / SST27SF512 / SST27SF010 / SST27SF020
SST27SF256 / 512 / 010 / 0205.0V-Read 256Kb / 512Kb / 1Mb / 2Mb (x8) MTP flash memories
Data Sheet
FEATURES:
* Organized as 32K x8 / 64K x8 / 128K x8 / 256K x8 * 4.5-5.5V Read Operation * Superior Reliability - Endurance: At least 1000 Cycles - Greater than 100 years Data Retention * Low Power Consumption - Active Current: 20 mA (typical) - Standby Current: 10 A (typical) * Fast Read Access Time - 70 ns - 90 ns * Fast Byte-Program Operation - Byte-Program Time: 20 s (typical) - Chip Program Time: 0.7 seconds (typical) for SST27SF256 1.4 seconds (typical) for SST27SF512 2.8 seconds (typical) for SST27SF010 5.6 seconds (typical) for SST27SF020 * Electrical Erase Using Programmer - Does not require UV source - Chip-Erase Time: 100 ms (typical) * TTL I/O Compatibility * JEDEC Standard Byte-wide EPROM Pinouts * Packages Available - 32-pin PLCC - 32-pin TSOP (8mm x 14mm) - 28-pin PDIP for SST27SF256/512 - 32-pin PDIP for SST27SF010/020
PRODUCT DESCRIPTION
The SST27SF256/512/010/020 are a 32K x8 / 64K x8 / 128K x8 / 256K x8 CMOS, Many-Time Programmable (MTP) low cost flash, manufactured with SST's proprietary, high performance SuperFlash technology. The split-gate cell design and thick oxide tunneling injector attain better reliability and manufacturability compared with alternate approaches. These MTP devices can be electrically erased and programmed at least 1000 times using an external programmer with a 12 volt power supply. They have to be erased prior to programming. These devices conform to JEDEC standard pinouts for byte-wide memories. Featuring high performance Byte-Program, the SST27SF256/512/010/020 provide a Byte-Program time of 20 s. Designed, manufactured, and tested for a wide spectrum of applications, these devices are offered with an endurance of at least 1000 cycles. Data retention is rated at greater than 100 years. The SST27SF256/512/010/020 are suited for applications that require infrequent writes and low power nonvolatile storage. These devices will improve flexibility, efficiency, and performance while matching the low cost in nonvolatile applications that currently use UV-EPROMs, OTPs, and mask ROMs. To meet surface mount and conventional through hole requirements, the SST27SF256/512 are offered in 32-pin PLCC, 32-pin TSOP and 28-pin PDIP packages. The , SST27SF010/020 are offered in 32-pin PDIP 32-pin PLCC , and 32-pin TSOP packages. See Figures 1, 2, and 3 for pinouts.
(c)2001 Silicon Storage Technology, Inc. S71152-02-000 5/01 502 1
Device Operation
The SST27SF256/512/010/020 are a low cost flash solution that can be used to replace existing UV-EPROM, OTP , and mask ROM sockets. These devices are functionally (read and program) and pin compatible with industry standard EPROM products. In addition to EPROM functionality, these devices also support electrical erase operation via an external programmer. They do not require a UV source to erase, and therefore the packages do not have a window.
Read
The Read operation of the SST27SF256/512/010/020 is controlled by CE# and OE#. Both CE# and OE# have to be low for the system to obtain data from the outputs. Once the address is stable, the address access time is equal to the delay from CE# to output (TCE). Data is available at the output after a delay of TOE from the falling edge of OE#, assuming that CE# pin has been low and the addresses have been stable for at least TCE - TOE. When the CE# pin is high, the chip is deselected and a typical standby current of 10 A is consumed. OE# is the output control and is used to gate data from the output pins. The data bus is in high impedance state when either CE# or OE# is high.
Byte-Program Operation
The SST27SF256/512/010/020 are programmed by using an external programmer. The programming mode for SST27SF256/010/020 is activated by asserting 12V (5%)
The SST logo and SuperFlash are registered trademarks of Silicon Storage Technology, Inc. MTP is a trademark of Silicon Storage Technology, Inc. These specifications are subject to change without notice.
256 Kbit / 512 Kbit / 1 Mbit / 2 Mbit Multi-Purpose Flash SST27SF256 / SST27SF512 / SST27SF010 / SST27SF020
Data Sheet on VPP pin, VDD = 5V (5%), VIL on CE# pin, and VIH on OE# pin. The programming mode for SST27SF512 is activated by asserting 12V (5%) on OE#/VPP pin, VDD = 5V (5%), and VIL on CE# pin. These devices are programmed byte-by-byte with the desired data at the desired address using a single pulse (CE# pin low for SST27SF256/512 and PGM# pin low for SST27SF010/ 020) of 20 s. Using the MTP programming algorithm, the Byte-Programming process continues byte-by-byte until the entire chip has been programmed.
Product Identification Mode
The Product Identification mode identifies the devices as the SST27SF256, SST27SF512, SST27SF010 and SST27SF020 and manufacturer as SST. This mode may be accessed by the hardware method. To activate this mode for SST27SF256/010/020, the programming equipment must force VH (12V5%) on address A9 with VPP pin at VDD (5V10%) or VSS. To activate this mode for SST27SF512, the programming equipment must force VH (12V5%) on address A9 with OE#/VPP pin at VIL. Two identifier bytes may then be sequenced from the device outputs by toggling address line A0. For details, see Tables 3, 4, and 5 for hardware operation. TABLE 1: PRODUCT IDENTIFICATION
Address Manufacturer's ID Device ID SST27SF256 SST27SF512 SST27SF010 SST27SF020 0001H 0001H 0001H 0001H A3H A4H A5H A6H
T1.1 502
Chip-Erase Operation
The only way to change a data from a "0" to "1" is by electrical erase that changes every bit in the device to "1". Unlike traditional EPROMs, which use UV light to do the ChipErase, the SST27SF256/512/010/020 uses an electrical Chip-Erase operation. This saves a significant amount of time (about 30 minutes for each Erase operation). The entire chip can be erased in a single pulse of 100 ms (CE# pin low for SST27SF256/512 and PGM# pin for SST27SF010/020). In order to activate the Erase mode for SST27SF256/010/020, the 12V (5%) is applied to VPP and A9 pins, VDD = 5V (5%), VIL on CE# pin, and VIH on OE# pin. In order to activate Erase mode for SST27SF512, the 12V (5%) is applied to OE#/VPP and A9 pins, VDD = 5V (5%), and VIL on CE# pin. All other address and data pins are "don't care". The falling edge of CE# (PGM# for SST27SF010/020) will start the Chip-Erase operation. Once the chip has been erased, all bytes must be verified for FFH. Refer to Figures 13, 14, and 15 for the flowcharts.
Data BFH
0000H
(c)2001 Silicon Storage Technology, Inc.
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256 Kbit / 512 Kbit / 1 Mbit / 2 Mbit Multi-Purpose Flash SST27SF256 / SST27SF512 / SST27SF010 / SST27SF020
Data Sheet FUNCTIONAL BLOCK DIAGRAM OF THE SST27SF256
X-Decoder
SuperFlash Memory
A14 - A0
Address Buffer Y-Decoder
CE# OE# VPP A9
Control Logic
I/O Buffers DQ7 - DQ0
502 ILL B1.1
FUNCTIONAL BLOCK DIAGRAM OF THE SST27SF512
X-Decoder
SuperFlash Memory
A15 - A0
Address Buffer Y-Decoder
CE# OE#/VPP A9
Control Logic
I/O Buffers DQ7 - DQ0
502 ILL B2.1
FUNCTIONAL BLOCK DIAGRAM OF THE SST27SF010/020
X-Decoder
SuperFlash Memory
AMS - A0
Address Buffer Y-Decoder
CE# OE# A9 VPP PGM#
I/O Buffers Control Logic DQ7 - DQ0
502 ILL B3.2
AMS = A17 for SST27SF020, A16 for SST27SF010
(c)2001 Silicon Storage Technology, Inc.
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256 Kbit / 512 Kbit / 1 Mbit / 2 Mbit Multi-Purpose Flash SST27SF256 / SST27SF512 / SST27SF010 / SST27SF020
Data Sheet
SST27SF256 SST27SF512 SST27SF010 SST27SF020
PGM# PGM# A14 A14
VDD
VPP
A12
A15
A16
VDD
VPP
A12
A15
A16
VDD
A12
A15
VDD
VPP
A12
SST27SF020 SST27SF010 SST27SF512 SST27SF256 A7 A6 A5 A4 A3 A2 A1 A0 DQ0 A7 A6 A5 A4 A3 A2 A1 A0 DQ0 A6 A5 A4 A3 A2 A1 A0 NC DQ0 A6 A5 A4 A3 A2 A1 A0 NC DQ0 5 6 7 8 9 10 11 12 13 SST27SF020 SST27SF010 SST27SF512 SST27SF256 4 3 2 1 32 31 30 29 28 27 26 25 24 23 22 21 14 15 16 17 18 19 20 VSS DQ1 DQ2 NC DQ3 DQ4 DQ5
A13 SST27SF256 SST27SF512 SST27SF010 SST27SF020 A8 A9 A11 NC OE# A10 CE# DQ7 DQ6 A8 A9 A11 NC OE#/VPP A10 CE# DQ7 DQ6 A14 A13 A8 A9 A11 OE# A10 CE# DQ7 A14 A13 A8 A9 A11 OE# A10 CE# DQ7
502 ILL F02c.2
32-pin PLCC Top View
DQ1
DQ2
VSS
NC
NC
A7
DQ3
DQ4 DQ5 DQ5
DQ1
DQ2
VSS
DQ3
DQ4
DQ1
DQ2
VSS
DQ3
DQ4
FIGURE 1: PIN ASSIGNMENTS FOR 32-PIN PLCC
(c)2001 Silicon Storage Technology, Inc.
DQ6
DQ6
DQ5
A13
NC
A7
NC
A17
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256 Kbit / 512 Kbit / 1 Mbit / 2 Mbit Multi-Purpose Flash SST27SF256 / SST27SF512 / SST27SF010 / SST27SF020
Data Sheet
SST27SF020 SST27SF010 SST27SF512 SST27SF256
A11 A9 A8 A13 A14 A17 PGM# VDD VPP A16 A15 A12 A7 A6 A5 A4 A11 A9 A8 A13 A14 NC PGM# VDD VPP A16 A15 A12 A7 A6 A5 A4 A11 A9 A8 A13 A14 NC NC VDD NC NC A15 A12 A7 A6 A5 A4 A11 A9 A8 A13 A14 NC NC VDD VPP NC NC A12 A7 A6 A5 A4 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 32 31 30 29 28 27 26 25 24 23 22 21 20 19 18 17
SST27SF256
OE# A10 CE# DQ7 DQ6 DQ5 DQ4 DQ3 VSS DQ2 DQ1 DQ0 A0 A1 A2 A3
SST27SF512 SST27SF010 SST27SF020
OE#/VPP A10 CE# DQ7 DQ6 DQ5 DQ4 DQ3 VSS DQ2 DQ1 DQ0 A0 A1 A2 A3 OE# A10 CE# DQ7 DQ6 DQ5 DQ4 DQ3 VSS DQ2 DQ1 DQ0 A0 A1 A2 A3 OE# A10 CE# DQ7 DQ6 DQ5 DQ4 DQ3 VSS DQ2 DQ1 DQ0 A0 A1 A2 A3
Standard Pinout Top View Die Up
502 ILL F01.1
FIGURE 2: PIN ASSIGNMENTS FOR 32-PIN TSOP (8MM X 14MM)
SST27SF020 SST27SF010 SST27SF512 A15 A12 A7 A6 A5 A4 A3 A2 A1 A0 DQ0 DQ1 DQ2 VSS SST27SF256 VPP A12 A7 A6 A5 A4 A3 A2 A1 A0 DQ0 DQ1 DQ2 VSS 1 2 3 4 5 6 7 8 9 10 11 12 13 14 28 27 26 25 24 23 22 21 20 19 18 17 16 15 SST27SF256 VDD A14 A13 A8 A9 A11 OE# A10 CE# DQ7 DQ6 DQ5 DQ4 DQ3
502 ILL F02a.1
SST27SF010 SST27SF020 1 2 3 4 5 32-pin 6 PDIP 7 8 Top View 9 10 11 12 13 14 15 16 32 31 30 29 28 27 26 25 24 23 22 21 20 19 18 17 VDD PGM# NC A14 A13 A8 A9 A11 OE# A10 CE# DQ7 DQ6 DQ5 DQ4 DQ3
502 ILL F02b.1
SST27SF512 VDD A14 A13 A8 A9 A11 OE#/VPP A10 CE# DQ7 DQ6 DQ5 DQ4 DQ3
28-pin PDIP Top View
VPP A16 A15 A12 A7 A6 A5 A4 A3 A2 A1 A0 DQ0 DQ1 DQ2 VSS
VPP A16 A15 A12 A7 A6 A5 A4 A3 A2 A1 A0 DQ0 DQ1 DQ2 VSS
VDD PGM# A17 A14 A13 A8 A9 A11 OE# A10 CE# DQ7 DQ6 DQ5 DQ4 DQ3
FIGURE 3: PIN ASSIGNMENTS FOR 28-PIN AND 32-PIN PDIP
(c)2001 Silicon Storage Technology, Inc.
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256 Kbit / 512 Kbit / 1 Mbit / 2 Mbit Multi-Purpose Flash SST27SF256 / SST27SF512 / SST27SF010 / SST27SF020
Data Sheet TABLE 2: PIN DESCRIPTION
Symbol AMS1-A0 DQ7-DQ0 CE# OE# OE#/VPP VPP VDD VSS NC Pin Name Address Inputs Data Input/output Chip Enable Output Enable Output Enable/VPP Power Supply for Program or Erase Power Supply Ground No Connection Unconnected pins.
T2.3 502
Functions To provide memory addresses To output data during Read cycles and receive input data during Program cycles The outputs are in tri-state when OE# or CE# is high. To activate the device when CE# is low For SST27SF256/010/020, to gate the data output buffers during Read operation For SST27SF512, to gate the data output buffers during Read operation and high voltage pin during Chip-Erase and programming operation For SST27SF256/010/020, high voltage pin during Chip-Erase and programming operation 12V (5%) To provide 5.0V supply (10%)
1. AMS = Most significant address AMS = A14 for SST27SF256, A15 for SST27SF512, A16 for SST27SF010, and A17 for SST27SF020
(c)2001 Silicon Storage Technology, Inc.
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256 Kbit / 512 Kbit / 1 Mbit / 2 Mbit Multi-Purpose Flash SST27SF256 / SST27SF512 / SST27SF010 / SST27SF020
Data Sheet TABLE 3: OPERATION MODES SELECTION FOR SST27SF256
Mode Read Output Disable Byte-Program Standby Chip-Erase Program/Erase Inhibit Product Identification CE# VIL VIL VIL VIH VIL VIH VIL OE# VIL VIH VIH X VIH X VIL VPP VDD or VSS VDD or VSS VPPH VDD or VSS VPPH VPPH VDD or VSS A9 AIN X AIN X VH X VH DQ DOUT High Z DIN High Z High Z High Z Manufacturer's ID (BFH) Device ID (A3H) Address AIN X AIN X X X A14 - A1 = VIL, A0 = VIL A14 - A1 = VIL, A0 = VIH
T3.1 502
Note: X = VIL or VIH VPPH = 12V5%, VH = 12V5%
TABLE 4: OPERATION MODES SELECTION FOR SST27SF512
Mode Read Output Disable Program Standby Chip-Erase Program/Erase Inhibit Product Identification CE# VIL VIL VIL VIH VIL VIH VIL OE#/VPP VIL VIH VPPH X VPPH VPPH VIL A9 AIN X AIN X VH X VH DQ DOUT High Z DIN High Z High Z High Z Manufacturer's ID (BFH) Device ID (A4H) Address AIN X AIN X X X A15 - A1 = VIL, A0 = VIL A15 - A1 = VIL, A0 = VIH
T4.1 502
Note: X = VIL or VIH VPPH = 12V5%, VH = 12V5%
TABLE 5: OPERATION MODES SELECTION FOR SST27SF010/020
Mode Read Output Disable Program Standby Chip-Erase Program/Erase Inhibit Product Identification CE# VIL VIL VIL VIH VIL VIH VIL OE# VIL VIH VIH X VIH X VIL PGM# X X VIL X VIL X X A9 AIN X AIN X VH X VH VPP VDD or VSS VDD or VSS VPPH VDD or VSS VPPH VPPH VDD or VSS DQ DOUT High Z DIN High Z High Z High Z Manufacturer's ID (BFH) Device ID1 Address AIN AIN AIN X X X AMS2 - A1 = VIL, A0 = VIL AMS2 - A1 = VIL, A0 = VIH
T5.1 502
1. Device ID = A5H for SST27SF010 and A6H for SST27SF020 2. AMS = Most significant address AMS = A16 for SST27SF010 and A17 for SST27SF020 Note: X = VIL or VIH VPPH = 12V5%, VH = 12V5%
(c)2001 Silicon Storage Technology, Inc.
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256 Kbit / 512 Kbit / 1 Mbit / 2 Mbit Multi-Purpose Flash SST27SF256 / SST27SF512 / SST27SF010 / SST27SF020
Data Sheet Absolute Maximum Stress Ratings (Applied conditions greater than those listed under "Absolute Maximum Stress Ratings" may cause permanent damage to the device. This is a stress rating only and functional operation of the device at these conditions or conditions greater than those defined in the operational sections of this data sheet is not implied. Exposure to absolute maximum stress rating conditions may affect device reliability.) Temperature Under Bias . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . -55C to +125C Storage Temperature . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . -65C to +150C D. C. Voltage on Any Pin to Ground Potential . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . -0.5V to VDD+0.5V Transient Voltage (<20 ns) on Any Pin to Ground Potential . . . . . . . . . . . . . . . . . . . . . . . . . . . . . -1.0V to VDD+1.0V Voltage on A9 and VPP Pin to Ground Potential . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . -0.5V to 14.0V Package Power Dissipation Capability (Ta = 25C) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1.0W Through Hold Lead Soldering Temperature (10 Seconds) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 300C Surface Mount Lead Soldering Temperature (3 Seconds) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 240C Output Short Circuit Current1 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 100 mA
1. Outputs shorted for no more than one second. No more than one output shorted at a time.
OPERATING RANGE
Range Commercial Ambient Temp 0C to +70C VDD 5.0V10% VPP 12V5%
AC CONDITIONS OF TEST
Input Rise/Fall Time . . . . . . . . . . . 10 ns Output Load . . . . . . . . . . . . . . . . . CL = 100 pF for 90 ns Output Load . . . . . . . . . . . . . . . . . CL = 30 pF for 70 ns See Figures 11 and 12
TABLE 6: READ MODE DC OPERATING CHARACTERISTICS FOR SST27SF256/512/010/020 VDD = 5.0V10%, VPP=VDD OR VSS (Ta = 0C to +70C (Commercial))
Limits Symbol IDD Parameter VDD Read Current 30 IPPR VPP Read Current 100 ISB1 ISB2 ILI ILO VIL VIH VOL VOH IH Standby VDD Current (TTL input) Standby VDD Current (CMOS input) Input Leakage Current Output Leakage Current Input Low Voltage Input High Voltage Output Low Voltage Output High Voltage Supervoltage Current for A9 2.4 100 2.0 3 100 1 10 0.8 VDD+0.5 0.2 A mA A A A V V V V A mA Min Max Units Test Conditions Address input=VIL/VIH at f=1/TRC Min VDD=VDD Max CE#=OE#=VIL, all I/Os open Address input=VIL/VIH at f=1/TRC Min VDD=VDD Max, VPP=VDD CE#=OE#=VIL, all I/Os open CE#=VIH, VDD=VDD Max CE#=VDD-0.3 VDD=VDD Max VIN=GND to VDD, VDD=VDD Max VOUT=GND to VDD, VDD=VDD Max VDD=VDD Min VDD=VDD Max IOL=2.1 mA, VDD=VDD Min IOH=-400 A, VDD=VDD Min CE#=OE#=VIL, A9=VH Max
T6.3 502
(c)2001 Silicon Storage Technology, Inc.
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256 Kbit / 512 Kbit / 1 Mbit / 2 Mbit Multi-Purpose Flash SST27SF256 / SST27SF512 / SST27SF010 / SST27SF020
Data Sheet TABLE 7: PROGRAM/ERASE DC OPERATING CHARACTERISTICS FOR SST27SF256 VDD=5.0V10%, VPP=VPPH (Ta=25C5C)
Limits Symbol Parameter IDD IPP ILI ILO VH IH VPPH VDD Erase or Program Current VPP Erase or Program Current Input Leakage Current Output Leakage Current Supervoltage for A9 Supervoltage Current for A9 High Voltage for VPP Pin Min Max Units Test Conditions 30 1 1 1 11.4 12.6 100 11.4 12.6 mA mA A A V A V
T7.1 502
CE#=VIL, OE#=VIH, VPP=12V5%, VDD=VDD Max CE#=VIL, OE#=VIH, VPP=12V5%, VDD=VDD Max VIN=GND to VDD, VDD=VDD Max VOUT=GND to VDD, VDD=VDD Max CE#=OE#=VIL, CE#=OE#=VIL, A9=VH Max
TABLE 8: PROGRAM/ERASE DC OPERATING CHARACTERISTICS FOR SST27SF512 VDD=5.0V10%, VPP=VPPH (Ta=25C5C)
Limits Symbol Parameter IDD IPP ILI ILO VH IH VPPH VDD Erase or Program Current VPP Erase or Program Current Input Leakage Current Output Leakage Current Supervoltage for A9 Supervoltage Current for A9 High Voltage for OE#/VPP Pin Min Max Units Test Conditions 30 1 1 1 11.4 12.6 100 11.4 12.6 mA mA A A V A V
T8.1 502
CE#=VIL, OE#/VPP=12V5%, VDD=VDD Max CE#=VIL, OE#/VPP=12V5%, VDD=VDD Max VIN=GND to VDD, VDD=VDD Max VOUT=GND to VDD, VDD=VDD Max CE#=OE#/VPP=VIL, CE#=OE#/VPP=VIL, A9=VH Max
TABLE 9: PROGRAM/ERASE DC OPERATING CHARACTERISTICS FOR SST27SF010/020 VDD=5.0V10%, VPP=VPPH (Ta=25C5C)
Limits Symbol Parameter IDD IPP ILI ILO VH IH VPPH VDD Erase or Program Current VPP Erase or Program Current Input Leakage Current Output Leakage Current Supervoltage for A9 Supervoltage Current for A9 High Voltage for VPP Pin Min Max Units Test Conditions 30 1 1 1 11.4 12.6 100 11.4 12.6 mA mA A A V A V
T9.1 502
CE#=PGM#=VIL, OE#=VIH, VPP=12V5%, VDD=VDD Max CE#=PGM#=VIL, OE#=VIH, VPP=12V5%, VDD=VDD Max VIN =GND to VDD, VDD=VDD Max VOUT =GND to VDD, VDD=VDD Max CE#=OE#=VIL, CE#=OE#=VIL, A9=VH Max
(c)2001 Silicon Storage Technology, Inc.
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256 Kbit / 512 Kbit / 1 Mbit / 2 Mbit Multi-Purpose Flash SST27SF256 / SST27SF512 / SST27SF010 / SST27SF020
Data Sheet TABLE 10: RECOMMENDED SYSTEM POWER-UP TIMINGS
Symbol TPU-READ1 TPU-WRITE
1
Parameter Power-up to Read Operation Power-up to Write Operation
Minimum 100 100
Units s s
T10.1 502
1. This parameter is measured only for initial qualification and after a design or process change that could affect this parameter.
TABLE 11: CAPACITANCE (Ta = 25C, f=1 Mhz, other pins open)
Parameter CI/O
1
Description I/O Pin Capacitance Input Capacitance
Test Condition VI/O = 0V VIN = 0V
Maximum 12 pF 6 pF
T11.0 502
CIN1
1. This parameter is measured only for initial qualification and after a design or process change that could affect this parameter.
TABLE 12: RELIABILITY CHARACTERISTICS
Symbol NEND TDR1 ILTH1
1
Parameter Endurance Data Retention Latch Up
Minimum Specification 1000 100 100
Units Cycles Years mA
Test Method JEDEC Standard A117 JEDEC Standard A103 JEDEC Standard 78
T12.2 502
1. This parameter is measured only for initial qualification and after a design or process change that could affect this parameter.
AC CHARACTERISTICS
TABLE 13: READ CYCLE TIMING PARAMETERS VDD = 5.0V10% (Ta = 0C to +70C (Commercial))
SST27SF256-70 SST27SF512-70 SST27SF010-70 SST27SF020-70 Symbol TRC TCE TAA TOE TCLZ1 TOLZ1 TCHZ1 TOHZ1 TOH1 Parameter Read Cycle Time Chip Enable Access Time Address Access Time Output Enable Access Time CE# Low to Active Output OE# Low to Active Output CE# High to High-Z Output OE# High to High-Z Output Output Hold from Address Change 0 0 0 25 25 0 Min 70 70 70 35 0 0 30 30 Max SST27SF256-90 SST27SF512-90 SST27SF010-90 SST27SF020-90 Min 90 90 90 45 Max Units ns ns ns ns ns ns ns ns ns
T13.1 502
1. This parameter is measured only for initial qualification and after a design or process change that could affect this parameter.
(c)2001 Silicon Storage Technology, Inc.
S71152-02-000 5/01
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256 Kbit / 512 Kbit / 1 Mbit / 2 Mbit Multi-Purpose Flash SST27SF256 / SST27SF512 / SST27SF010 / SST27SF020
Data Sheet TABLE 14: PROGRAM/ERASE CYCLE TIMING PARAMETERS FOR SST27SF256
Symbol TAS TAH TPRT TVPS TVPH TPW TEW TDS TDH TVR TART TA9S TA9H Parameter Address Setup Time Address Hold Time VPP Pulse Rise Time VPP Setup Time VPP Hold Time CE# Program Pulse Width CE# Erase Pulse Width Data Setup Time Data Hold Time VPP and A9 Recovery Time A9 Rise Time to 12V during Erase A9 Setup Time during Erase A9 Hold Time during Erase Min 1 1 50 1 1 20 100 1 1 1 50 1 1 Max Units s s ns s s s ms s s s ns s s
T14.0 502
30 500
TABLE 15: PROGRAM/ERASE CYCLE TIMING PARAMETERS FOR SST27SF512
Symbol TAS TAH TPRT TVPS TVPH TPW TEW TDS TDH TVR TART TA9S TA9H Parameter Address Setup Time Address Hold Time OE#/VPP Pulse Rise Time OE#/VPP Setup Time OE#/VPP Hold Time CE# Program Pulse Width CE# Erase Pulse Width Data Setup Time Data Hold Time OE#/VPP and A9 Recovery Time A9 Rise Time to 12V during Erase A9 Setup Time during Erase A9 Hold Time during Erase Min 1 1 50 1 1 20 100 1 1 1 50 1 1 Max Units s s ns s s s ms s s s ns s s
T15.0 502
30 500
TABLE 16: PROGRAM/ERASE CYCLE TIMING PARAMETERS FOR SST27SF010/020
Symbol TCES TCEH TAS TAH TPRT TVPS TVPH TPW TEW TDS TDH TVR TART TA9S TA9H Parameter CE# Setup Time CE# Hold Time Address Setup Time Address Hold Time VPP Pulse Rise Time VPP Setup Time VPP Hold Time PGM# Program Pulse Width PGM# Erase Pulse Width Data Setup Time Data Hold Time A9 Recovery Time for Erase A9 Rise Time to 12V during Erase A9 Setup Time during Erase A9 Hold Time during Erase Min 1 1 1 1 50 1 1 20 100 1 1 1 50 1 1 Max Units s s s s ns s s s ms s s s ns s s
T16.0 502
30 500
(c)2001 Silicon Storage Technology, Inc.
S71152-02-000 5/01
502
11
256 Kbit / 512 Kbit / 1 Mbit / 2 Mbit Multi-Purpose Flash SST27SF256 / SST27SF512 / SST27SF010 / SST27SF020
Data Sheet
TRC
TAA
ADDRESS
CE#
TCE
OE#
TOE
TOLZ
TOHZ TOH DATA VALID TCHZ DATA VALID
DQ7-0
HIGH-Z TCLZ
502 ILL F03.0
FIGURE 4: READ CYCLE TIMING DIAGRAM FOR SST27SF256/512/010/020
ADDRESS (EXCEPT A9)
CE# TEW OE# VIH DQ7-0 VPPH VDD VPP VSS VPPH A9 VIH VIL TART TA9H
502 ILL F04a.1
TVPS TVPH TPRT TVR
TA9S
TVR
FIGURE 5: CHIP-ERASE TIMING DIAGRAM FOR SST27SF256
(c)2001 Silicon Storage Technology, Inc.
S71152-02-000 5/01
502
12
256 Kbit / 512 Kbit / 1 Mbit / 2 Mbit Multi-Purpose Flash SST27SF256 / SST27SF512 / SST27SF010 / SST27SF020
Data Sheet
ADDRESS (EXCEPT A9)
CE# TEW
DQ7-0
VPPH OE#/VPP VDD VSS VPPH A9 VIH VIL TART TPRT
TVPS TVPH
TVR
TA9S TVR
TA9H
502 ILL F04b.1
FIGURE 6: READ CYCLE TIMING DIAGRAM FOR SST27SF512
ADDRESS (EXCEPT A9) CE#
TCEH
OE# VIH
DQ7-0 VPPH VDD VSS VPPH A9 VIH VIL TART TA9H PGM# TCES
502 ILL F04c.1
TVPS TVPH TPRT TA9S TVR
VPP
TEW
FIGURE 7: CHIP-ERASE TIMING DIAGRAM FOR SST27SF010/020
(c)2001 Silicon Storage Technology, Inc.
S71152-02-000 5/01
502
13
256 Kbit / 512 Kbit / 1 Mbit / 2 Mbit Multi-Purpose Flash SST27SF256 / SST27SF512 / SST27SF010 / SST27SF020
Data Sheet
ADDRESS
ADDRESS VALID
TAS TAH
CE#
TPW
OE#
VIH
TDS TDH
DQ7-0
HIGH-Z VPPH VDD
DATA VALID TVR
TVPS
VPP
VSS
TPRT
TVPH
502 ILL F05a.1
FIGURE 8: BYTE-PROGRAM TIMING DIAGRAM FOR SST27SF256
ADDRESS
ADDRESS VALID
TAS TAH TPW
CE#
TDS
TDH
DQ7-0
HIGH-Z
DATA VALID
VPPH VDD OE#/VPP
TPRT
TVR
TVPS
VSS
TVPH
502 ILL F05b.2
FIGURE 9: BYTE-PROGRAM TIMING DIAGRAM FOR SST27SF512
(c)2001 Silicon Storage Technology, Inc.
S71152-02-000 5/01
502
14
256 Kbit / 512 Kbit / 1 Mbit / 2 Mbit Multi-Purpose Flash SST27SF256 / SST27SF512 / SST27SF010 / SST27SF020
Data Sheet
ADDRESS
ADDRESS VALID
TAH
CE#
TAS
TCEH
OE#
VIH
TDS TDH
DQ7-0
HIGH-Z VPPH VDD
DATA VALID
TVPS
VPP PGM#
TPRT
VSS
TPW TVPH
TCES
502 ILL F05c.1
FIGURE 10: BYTE-PROGRAM TIMING DIAGRAM FOR SST27SF010/020
(c)2001 Silicon Storage Technology, Inc.
S71152-02-000 5/01
502
15
256 Kbit / 512 Kbit / 1 Mbit / 2 Mbit Multi-Purpose Flash SST27SF256 / SST27SF512 / SST27SF010 / SST27SF020
Data Sheet
VIHT VHT
INPUT REFERENCE POINTS
VHT
OUTPUT
VLT VILT
VLT
502 ILL F06.0
AC test inputs are driven at VIHT (2.4 V) for a logic "1" and VILT (0.4 V) for a logic "0". Measurement reference points for inputs and outputs are VHT (2.0 V) and VLT (0.8 V). Input rise and fall times (10% 90%) are <10 ns.
Note: VHT - VHIGH Test VLT - VLOW Test VIHT - VINPUT HIGH Test VILT - VINPUT LOW Test
FIGURE 11: AC INPUT/OUTPUT REFERENCE WAVEFORMS
VDD TO TESTER RL HIGH
TO DUT CL RL LOW
502 ILL F07.1
FIGURE 12: A TEST LOAD EXAMPLE
(c)2001 Silicon Storage Technology, Inc.
S71152-02-000 5/01
502
16
256 Kbit / 512 Kbit / 1 Mbit / 2 Mbit Multi-Purpose Flash SST27SF256 / SST27SF512 / SST27SF010 / SST27SF020
Data Sheet
Start
VPP = VPPH, A9 = VH
Erase 100ms pulse (CE# = VIL)
VPP = VDD or VSS A9 = VIL or VIH
Wait for VPP and A9 Recovery Time
Read Device (CE# = OE# = VIL)
No Compare All bytes to FFH Yes
Device Passed
Device Failed
502 ILL F08a.2
FIGURE 13: CHIP-ERASE ALGORITHM FOR SST27SF256
(c)2001 Silicon Storage Technology, Inc.
S71152-02-000 5/01
502
17
256 Kbit / 512 Kbit / 1 Mbit / 2 Mbit Multi-Purpose Flash SST27SF256 / SST27SF512 / SST27SF010 / SST27SF020
Data Sheet
Start
A9 = VH
OE#/VPP = VPPH
Erase 100ms pulse (CE# = VIL)
OE#/VPP = VDD or VSS A9 = VIL or VIH
Wait for OE#/VPP and A9 Recovery Time Read Device (CE# = OE# = VIL)
No Compare All bytes to FFH Yes
Device Passed
Device Failed
502 ILL F08b.2
FIGURE 14: CHIP-ERASE ALGORITHM FOR SST27SF512
(c)2001 Silicon Storage Technology, Inc.
S71152-02-000 5/01
502
18
256 Kbit / 512 Kbit / 1 Mbit / 2 Mbit Multi-Purpose Flash SST27SF256 / SST27SF512 / SST27SF010 / SST27SF020
Data Sheet
Start
A9 = VH, VPP = VPPH
CE# = VIL, OE# = VIH Erase 100ms pulse (PGM# = VIL)
PGM# = VIH
A9 = VIL or VIH
Wait A9 Recovery Time
Read Device
Compare all bytes to FFH Yes
No
Device Passed
Device Failed
502 ILL F08c.1
FIGURE 15: CHIP-ERASE ALGORITHM FOR SST27SF010/020
(c)2001 Silicon Storage Technology, Inc.
S71152-02-000 5/01
502
19
256 Kbit / 512 Kbit / 1 Mbit / 2 Mbit Multi-Purpose Flash SST27SF256 / SST27SF512 / SST27SF010 / SST27SF020
Data Sheet
Start
Erase*
VPP = VPPH
Address = First Location
Program 20s pulse (CE# = VIL)
Increment Address No
Last Address? Yes
VPP = VDD or VSS
Wait for VPP RecoveryTime Read Device (CE# = OE# = VIL)
Compare all bytes to original data Yes
No
Device Passed
Device Failed
502 ILL F09a.3
* See Figure 13
FIGURE 16: BYTE-PROGRAM ALGORITHM FOR SST27SF256
(c)2001 Silicon Storage Technology, Inc.
S71152-02-000 5/01
502
20
256 Kbit / 512 Kbit / 1 Mbit / 2 Mbit Multi-Purpose Flash SST27SF256 / SST27SF512 / SST27SF010 / SST27SF020
Data Sheet
Start
Erase*
OE#/VPP = VPPH
Address = First Location
Program 20s pulse (CE# = VIL)
Increment Address No
Last Address? Yes
OE#/VPP = VDD or VSS
Wait for OE#/VPP RecoveryTime Read Device (CE# = OE# = VIL)
Compare all bytes to original data Yes
No
Device Passed
Device Failed
502 ILL F09b.2
* See Figure 14
FIGURE 17: BYTE-PROGRAM ALGORITHM FOR SST27SF512
(c)2001 Silicon Storage Technology, Inc.
S71152-02-000 5/01
502
21
256 Kbit / 512 Kbit / 1 Mbit / 2 Mbit Multi-Purpose Flash SST27SF256 / SST27SF512 / SST27SF010 / SST27SF020
Data Sheet
Start
Erase*
VPP = VPPH
Address = First Location
CE# = VIL, OE# = VIH
Program 20s pulse (PGM# = VIL)
Increment Address No
Last Address? Yes
Read Device
Compare all bytes to original data Yes
No
Device Passed
Device Failed
502 ILL F09c.1
* See Figure 15
FIGURE 18: BYTE-PROGRAM ALGORITHM FOR SST27SF010/020
(c)2001 Silicon Storage Technology, Inc.
S71152-02-000 5/01
502
22
256 Kbit / 512 Kbit / 1 Mbit / 2 Mbit Multi-Purpose Flash SST27SF256 / SST27SF512 / SST27SF010 / SST27SF020
Data Sheet Device SST27SFxxx Speed - XXX Suffix1 XX Suffix2 XX Package Modifier G = 28 pins H = 32 pins Numeric = Die modifier Package Type N = PLCC W = TSOP (die up) (8mm x 14mm) P = PDIP Operating Temperature C = Commercial = 0 to +70C Minimum Endurance 3 = 1000 cycles Read Access Speed 70 = 70 ns 90 = 90 ns Device Density 256 = 256 Kilobit 512 = 512 Kilobit 010 = 1 Megabit 020 = 2 Megabit
(c)2001 Silicon Storage Technology, Inc.
S71152-02-000 5/01
502
23
256 Kbit / 512 Kbit / 1 Mbit / 2 Mbit Multi-Purpose Flash SST27SF256 / SST27SF512 / SST27SF010 / SST27SF020
Data Sheet Valid combinations for SST27SF256 SST27SF256-70-3C-NH SST27SF256-90-3C-NH SST27SF256-70-3C-WH SST27SF256-90-3C-WH SST27SF256-70-3C-PG SST27SF256-90-3C-PG
Valid combinations for SST27SF512 SST27SF512-70-3C-NH SST27SF512-90-3C-NH SST27SF512-70-3C-WH SST27SF512-90-3C-WH SST27SF512-70-3C-PG SST27SF512-90-3C-PG
Valid combinations for SST27SF010 SST27SF010-70-3C-NH SST27SF010-90-3C-NH SST27SF010-70-3C-WH SST27SF010-90-3C-WH SST27SF010-70-3C-PH SST27SF010-90-3C-PH
Valid combinations for SST27SF020 SST27SF020-70-3C-NH SST27SF020-90-3C-NH
Example:
SST27SF020-70-3C-WH SST27SF020-90-3C-WH
SST27SF020-70-3C-PH SST27SF020-90-3C-PH
Valid combinations are those products in mass production or will be in mass production. Consult your SST sales representative to confirm availability of valid combinations and to determine availability of new combinations.
(c)2001 Silicon Storage Technology, Inc.
S71152-02-000 5/01
502
24
256 Kbit / 512 Kbit / 1 Mbit / 2 Mbit Multi-Purpose Flash SST27SF256 / SST27SF512 / SST27SF010 / SST27SF020
Data Sheet
PACKAGING DIAGRAMS
TOP VIEW
.485 .495 .447 .453 .042 .048
2 1 32
SIDE VIEW
.106 .112 .020 R. MAX. .023 x 30 .029 .030 R. .040
BOTTOM VIEW
Optional Pin #1 Identifier
.042 .048 .585 .595 .547 .553 .026 .032
.013 .021 .400 BSC
.490 .530
.050 BSC. .015 Min. .050 BSC. .125 .140 .075 .095 .026 .032
Note:
1. Complies with JEDEC publication 95 MS-016 AE dimensions, although some dimensions may be more stringent. 2. All linear dimensions are in inches (min/max). 3. Dimensions do not include mold flash. Maximum allowable mold flash is .008 inches. 32.PLCC.NH-ILL.2 4. Coplanarity: 4 mils.
32-PIN PLASTIC LEAD CHIP CARRIER (PLCC) SST PACKAGE CODE: NH
1.05 0.95 .50 BSC
Pin # 1 Identifier
8.10 7.90
.270 .170
12.50 12.30
0.15 0.05
0.70 0.50
14.20 13.80
32.TSOP-WH-ILL.4
Note:
1. Complies with JEDEC publication 95 MO-142 BA dimensions, although some dimensions may be more stringent. 2. All linear dimensions are in millimeters (min/max). 3. Coplanarity: 0.1 (.05) mm. 4. Maximum allowable mold flash is 0.15mm at the package ends, and 0.25mm between leads.
32-PIN THIN SMALL OUTLINE PACKAGE (TSOP) 8MM X 14MM SST PACKAGE CODE: WH
(c)2001 Silicon Storage Technology, Inc.
S71152-02-000 5/01
502
25
256 Kbit / 512 Kbit / 1 Mbit / 2 Mbit Multi-Purpose Flash SST27SF256 / SST27SF512 / SST27SF010 / SST27SF020
Data Sheet
28
C L
Pin #1 Identifier
.065 .075
1
.600 .625 .530 .550 1.445 1.455 7 4 PLCS.
Base Plane Seating Plane
.015 .050 .120 .150
.170 .200
.008 .012 .600 BSC
0 15
.070 .080
.045 .065
.016 .022
.100 BSC
Note:
1. Complies with JEDEC publication 95 MO-015 AH dimensions, although some dimensions may be more stringent. 2. All linear dimensions are in inches (min/max). 3. Dimensions do not include mold flash. Maximum allowable mold flash is .010 inches.
28.pdipPG-ILL.2
28-PIN PLASTIC DUAL-IN-LINE PACKAGE (PDIP) SST PACKAGE CODE: PG
32
C L
.600 .625
Pin #1 Identifier
.065 .075
1
1.645 1.655 7 4 PLCS.
.530 .550
Base Plane Seating Plane
.015 .050 .120 .150
.170 .200
.008 .012 .600 BSC
0 15
.070 .080
.045 .065
.016 .022
.100 BSC
Note:
1. Complies with JEDEC publication 95 MO-015 AP dimensions, although some dimensions may be more stringent. 2. All linear dimensions are in inches (min/max). 3. Dimensions do not include mold flash. Maximum allowable mold flash is .010 inches.
32.pdipPH-ILL.2
32-PIN PLASTIC DUAL-IN-LINE PACKAGE (PDIP) SST PACKAGE CODE: PH
Silicon Storage Technology, Inc. * 1171 Sonora Court * Sunnyvale, CA 94086 * Telephone 408-735-9110 * Fax 408-735-9036 www.SuperFlash.com or www.ssti.com
(c)2001 Silicon Storage Technology, Inc. S71152-02-000 5/01 502
26

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